文献
J-GLOBAL ID:201802266749805713
整理番号:18A0995129
ハイドロフルオロカーボンによる窒化物エッチング III 低k′窒化物スペーサエッチプロセスのためのC_4H_9FとCH_3Fの比較【JST・京大機械翻訳】
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
著者 (12件):
Miyazoe Hiroyuki
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
,
Marchack Nathan
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
,
Bruce Robert L.
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
,
Zhu Yu
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
,
Nakamura Masahiro
(Zeon Specialty Materials Inc., San Jose, California 95134)
,
Miller Eric
(IBM Albany Nanotech, 257 Fuller Road, Albany, New York 12203)
,
Kanakasabapathy Sivananda
(IBM Albany Nanotech, 257 Fuller Road, Albany, New York 12203)
,
Suzuki Takefumi
(Zeon Corporation, Kawasaki 210-9507, Japan)
,
Ito Azumi
(Zeon Corporation, Kawasaki 210-9507, Japan)
,
Matsumoto Hirokazu
(Zeon Corporation, Kawasaki 210-9507, Japan)
,
Engelmann Sebastian U.
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
,
Joseph Eric A.
(IBM, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
36
号:
3
ページ:
032201-032201-7
発行年:
2018年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)