文献
J-GLOBAL ID:201802266927623868
整理番号:18A1425007
グラフェン/HBN垂直ヘテロ構造のゲート依存トンネリング電流変調【JST・京大機械翻訳】
Gate-Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures
著者 (6件):
Iqbal Muhammad Zahir
(Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa 23640, Pakistan)
,
Siddique Salma
(Institute of Industrial Biotechnology, GC University Lahore, Lahore 54000, Pakistan)
,
Khan Muhammad Farooq
(Department of Physics & Graphene Research Institute, Sejong University, Seoul 143-747, Korea)
,
Rehman Atteq ur
(Department of Electrical Engineering, Sarhad University of Science and Information Technology, Peshawar, Pakistan)
,
Rehman Adil
(Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa 23640, Pakistan)
,
Eom Jonghwa
(Department of Physics & Graphene Research Institute, Sejong University, Seoul 143-747, Korea)
資料名:
Advanced Engineering Materials
(Advanced Engineering Materials)
巻:
20
号:
7
ページ:
e1800159
発行年:
2018年
JST資料番号:
W2018A
ISSN:
1438-1656
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)