文献
J-GLOBAL ID:201802267875554755
整理番号:18A0580647
照明強度の変動を用いたコロネン中間層によるAl/n-Si Schottkyダイオードにおけるダイオードパラメータの改善【Powered by NICT】
Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity
著者 (5件):
Pakma Osman
(Department of Physics, Science and Art Faculty, Batman University, Batman, Turkey)
,
Cavdar Suekrue
(Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey)
,
Koralay Haluk
(Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey)
,
Tugluoglu Nihat
(Department of Energy Systems Engineering, Faculty of Engineering, Giresun University, Giresun, Turkey)
,
Faruk Yueksel OEmer
(Department of Physics, Faculty of Science, Selcuk University, Konya, Turkey)
資料名:
Physica B. Condensed Matter
(Physica B. Condensed Matter)
巻:
527
ページ:
1-6
発行年:
2017年
JST資料番号:
H0676B
ISSN:
0921-4526
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)