文献
J-GLOBAL ID:201802268805516775
整理番号:18A1383616
高絶縁破壊電圧と抵抗率を有する透明ZnO:Al_2O_3膜【JST・京大機械翻訳】
Transparent ZnO:Al2O3 films with high breakdown voltage and resistivity
著者 (6件):
Liu Shiying
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
,
Liu Shan
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
,
Zhou Yaoyao
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
,
Piao Yongjun
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
,
Li Guojian
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
,
Wang Qiang
(Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
3
ページ:
032102-032102-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)