文献
J-GLOBAL ID:201802269743027447
整理番号:18A0931476
酸化インジウムスズナノ粒子と銀ナノワイヤの積層電極による金属酸化物薄膜トランジスタの電荷注入の改善【JST・京大機械翻訳】
Improved Charge Injection of Metal Oxide Thin-Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires
著者 (5件):
Kim Chaewon
(School of Advanced Materials Engineering, Kookmin University, Seoul, 02707, South Korea)
,
Kim Yong-Hoon
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggo-do, 16419, South Korea)
,
Noh Yong-Young
(Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, South Korea)
,
Hong Sung-Jei
(Display Materials and Components Research Center, Korea Electronics Technology Institute, Seongnam, 13509, South Korea)
,
Lee Mi Jung
(School of Advanced Materials Engineering, Kookmin University, Seoul, 02707, South Korea)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
4
号:
4
ページ:
e1700440
発行年:
2018年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)