文献
J-GLOBAL ID:201802270036173320
整理番号:18A1104747
微小重力下の垂直勾配凍結法によるIn_xGa_1-xSbの配向依存溶解と成長速度論【JST・京大機械翻訳】
Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity
著者 (12件):
Nirmal Kumar V.
(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Japan)
,
Hayakawa Y.
(Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan)
,
Arivanandhan M.
(Centre for Nanoscience and Technology, Anna University, Chennai, India)
,
Rajesh G.
(Tagore Institute of Engineering and Technology, Deviyakurichi, Attur, India)
,
Koyama T.
(Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan)
,
Momose Y.
(Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan)
,
Ozawa T.
(Department of Electrical Engineering, Shizuoka Institute of Science and Technology, Shizuoka, Japan)
,
Okano Y.
(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Japan)
,
Okano Y.
(Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan)
,
Okano Y.
(Graduate School of Engineering Science, Osaka University, Osaka, Japan)
,
Inatomi Y.
(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Japan)
,
Inatomi Y.
(Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
496-497
ページ:
15-17
発行年:
2018年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)