文献
J-GLOBAL ID:201802271643490257
整理番号:18A1144259
InGaAs-on-InP MOSFETにおける歪誘起電子移動度増加の背後の物理的機構【JST・京大機械翻訳】
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs
著者 (3件):
Krivec Sabina
(Department of Electronics, Microelectronics, Computer, and Intelligent Systems, Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia)
,
Poljak Mirko
(Department of Electronics, Microelectronics, Computer, and Intelligent Systems, Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia)
,
Suligoj Tomislav
(Department of Electronics, Microelectronics, Computer, and Intelligent Systems, Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
7
ページ:
2784-2789
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)