文献
J-GLOBAL ID:201802272156346629
整理番号:18A0519872
多量にドープした半導体基板上のパルスマイクロ波センサ【Powered by NICT】
Pulsed microwave sensor on heavily doped semiconductor substrate
著者 (9件):
Suziedelis A.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Asmontas S.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Gradauskas J.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Silenas A.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Lucun A.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Cerskus A.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Paskevic C.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Zalys O.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
,
Anbinderis M.
(Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10222 Vilnius, Lithuania)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
PIERS - FALL
ページ:
1037-1042
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)