文献
J-GLOBAL ID:201802272453401836
整理番号:18A1378316
P-14:窒素ドープ非晶質InGaZnO薄膜トランジスタの過渡応答特性【JST・京大機械翻訳】
P-14: Transient Response Properties of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors
著者 (6件):
Dong Chengyuan
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
,
Tong Xianyu
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
,
Xie Haiting
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
,
Zhang Lei
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
,
Liu Guochao
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
,
Zhou Yan
(Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China, 200240)
資料名:
Digest of Technical Papers. SID International Symposium (Society for Information Display)
(Digest of Technical Papers. SID International Symposium (Society for Information Display))
巻:
49
号:
1
ページ:
1231-1234
発行年:
2018年
JST資料番号:
E0907A
ISSN:
0097-966X
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)