文献
J-GLOBAL ID:201802272636310730
整理番号:18A0159575
溶液法で作製したa InMgZnO薄膜トランジスタのデバイス性能に及ぼすN_2Oプラズマ処理の影響【Powered by NICT】
The Effects of N2O Plasma Treatment on the Device Performance of Solution-Processed a-InMgZnO Thin-Film Transistors
著者 (7件):
Cheng Jin
(Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing, China)
,
Yu Zhinong
(Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing, China)
,
Li Xuyang
(Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing, China)
,
Guo Jian
(Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, China)
,
Yan Wei
(Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing, China)
,
Xue Jianshe
(Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, China)
,
Xue Wei
(Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
1
ページ:
136-141
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)