文献
J-GLOBAL ID:201802273269618399
整理番号:18A0446789
3nm CMOS技術のための電力を意識したFinFETと横方向ナノシートFET標的化【Powered by NICT】
Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology
著者 (12件):
Yakimets D.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Bardon M. Garcia
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Jang D.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Schuddinck P.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Sherazi Y.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Weckx P.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Miyaguchi K.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Parvais B.
(Vrije Universiteit Brussel, Dept. of Electronics and Informatics, Brussels, Belgium)
,
Raghavan P.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Spessot A.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Verkest D.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
,
Mocuta A.
(imec, Kapeldreef 75, 3001 Leuven, Belgium)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IEDM
ページ:
20.4.1-20.4.4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)