文献
J-GLOBAL ID:201802275135842941
整理番号:18A0755159
Cu(In,Ga)Se_2太陽電池性能におけるCu欠乏層形成の効果【JST・京大機械翻訳】
Effect of Cu-deficient layer formation in Cu(In,Ga)Se2 solar-cell performance
著者 (6件):
Nishimura Takahito
(Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan)
,
Nishimura Takahito
(Research Fellow of Japan Society for the Promotion of Science, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo, 102-0083, Japan)
,
Toki Soma
(Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan)
,
Sugiura Hiroki
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro-ku, Tokyo, 152-8552, Japan)
,
Nakada Kazuyoshi
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro-ku, Tokyo, 152-8552, Japan)
,
Yamada Akira
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro-ku, Tokyo, 152-8552, Japan)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
26
号:
4
ページ:
291-302
発行年:
2018年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)