文献
J-GLOBAL ID:201802275954782564
整理番号:18A0795947
パリレン不動態化によるエピタキシャルグラフェン表面伝導率と量子Hallデバイス安定性の調査【JST・京大機械翻訳】
Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation
著者 (18件):
Rigosi Albert F.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Liu Chieh-I
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Liu Chieh-I
(Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan)
,
Wu Bi Yi
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Wu Bi Yi
(Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan)
,
Lee Hsin-Yen
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Lee Hsin-Yen
(Theiss Research, La Jolla, CA 92037, United States)
,
Kruskopf Mattias
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Kruskopf Mattias
(Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States)
,
Yang Yanfei
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Yang Yanfei
(Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States)
,
Hill Heather M.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Hu Jiuning
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Bittle Emily G.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Obrzut Jan
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Hight Walker Angela R.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Elmquist Randolph E.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
,
Newell David B.
(National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
194
ページ:
51-55
発行年:
2018年
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)