文献
J-GLOBAL ID:201802276060076170
整理番号:18A0165166
PINおよびp NOIトンネル電子デバイスと可能性のある応用の垂直変異体【Powered by NICT】
Vertical variants of PIN and p-NOI tunnel electronic devices and potential applications
著者 (6件):
Ravariu C.
(Dept. of Electronic Devices and Circuits & Dept. of Organic, Chemistry University Politehnica of Bucharest, Bucharest, Romania, Splaiul Independentei 313, Sect.6, 060042)
,
Babarada F.
(Dept. of Electronic Devices and Circuits & Dept. of Organic, Chemistry University Politehnica of Bucharest, Bucharest, Romania, Splaiul Independentei 313, Sect.6, 060042)
,
Mihaiescu D.
(Dept. of Electronic Devices and Circuits & Dept. of Organic, Chemistry University Politehnica of Bucharest, Bucharest, Romania, Splaiul Independentei 313, Sect.6, 060042)
,
Idu M.
(Dept. of Electronic Devices and Circuits & Dept. of Organic, Chemistry University Politehnica of Bucharest, Bucharest, Romania, Splaiul Independentei 313, Sect.6, 060042)
,
Vladoianu L.
(Dept. of Electronic Devices and Circuits & Dept. of Organic, Chemistry University Politehnica of Bucharest, Bucharest, Romania, Splaiul Independentei 313, Sect.6, 060042)
,
Manea E.
(Department of Microtechnology, National Institute for Development and Research of Microtechnology IMT, Bucharest, Romania, Str. Erou Iancu Nicolae 126A, 077190)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISEEE
ページ:
1-6
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)