文献
J-GLOBAL ID:201802276654472368
整理番号:18A0911019
4H-SIC p-i-nダイオードのフォワード-電流劣化における単一Shockley型積層欠陥の拡張に及ぼす基底面転位構造の影響
Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
著者 (15件):
HAYASHI Shohei
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
HAYASHI Shohei
(Toray Res. Center Inc., Otsu, JPN)
,
YAMASHITA Tamotsu
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
YAMASHITA Tamotsu
(Showa Denko K.K., Tokyo, JPN)
,
SENZAKI Junji
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
MIYAZATO Masaki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
MIYAZATO Masaki
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
RYO Mina
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
RYO Mina
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
MIYAJIMA Masaaki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
MIYAJIMA Masaaki
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
KATO Tomohisa
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
YONEZAWA Yoshiyuki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
KOJIMA Kazutoshi
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
OKUMURA Hajime
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
57
号:
4S
ページ:
04FR07.1-04FR07.6
発行年:
2018年04月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)