文献
J-GLOBAL ID:201802278168154602
整理番号:18A1862632
GaAs基板上に成長させたGaInPおよびAlInAs変成バッファの歪緩和比較【JST・京大機械翻訳】
Strain relaxation comparison of GaInP and AlInAs metamorphic buffers grown on GaAs substrates
著者 (4件):
Li Kuilong
(College of Science, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China)
,
Wang Wenjia
(College of Science, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China)
,
Wang Qiang
(College of Science, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China)
,
Leng Jiancai
(College of Science, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
768
ページ:
74-80
発行年:
2018年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)