文献
J-GLOBAL ID:201802278926132155
整理番号:18A0838263
電子ビーム蒸着により作製したナノ構造ZnSe/ZnS多層薄膜の光ルミネセンスに及ぼす厚さとアニーリングの影響【JST・京大機械翻訳】
Influence of thickness and annealing on photoluminescence of nanostructured ZnSe/ZnS multilayer thin films prepared by electron beam evaporation
著者 (7件):
Ou Kai
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Wang Shenwei
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Huang Miaoling
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Zhang Yanwei
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Wang Yu
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Duan Xiaoxia
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
,
Yi Lixin
(Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China)
資料名:
Journal of Luminescence
(Journal of Luminescence)
巻:
199
ページ:
34-38
発行年:
2018年
JST資料番号:
D0731A
ISSN:
0022-2313
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)