文献
J-GLOBAL ID:201802280329362480
整理番号:18A0588571
超急勾配サブ閾値傾斜PN体のゲート制御ダイオード特性は高効率RFエネルギーハーベスティングのためのSOI-FETの関連【Powered by NICT】
Gate controlled diode characteristics of super steep subthreshold slope PN-body tied SOI-FET for high efficiency RF energy harvesting
著者 (10件):
Momose Shun
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Ida Jiro
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Mori Takayuki
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Yoshida Takahiro
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Iwata Jumpei
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Horii Takashi
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Furuta Takahiro
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Itoh Kenji
(Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 Japan)
,
Ishibashi Koichiro
(The University of Electro-Communications, Tokyo Japan)
,
Arai Yasuo
(High Energy Accelerator Research Org., KEK, Tsukuba Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
S3S
ページ:
1-3
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)