文献
J-GLOBAL ID:201802280720357843
整理番号:18A1942058
ナノ秒レーザ修飾シリコンに基づくNIR光検出器【JST・京大機械翻訳】
NIR Photodetector Based on Nanosecond Laser-Modified Silicon
著者 (6件):
Zhao Ji-Hong
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
,
Li Chun-Hao
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
,
Li Xian-Bin
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
,
Chen Qi-Dai
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
,
Chen Zhan-Guo
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
,
Sun Hong-Bo
(State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
11
ページ:
4905-4909
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)