文献
J-GLOBAL ID:201802281100845274
整理番号:18A0860815
40nm TAOXに基づくRERAMの耐久性ストレスデータ保持故障の抑制【JST・京大機械翻訳】
Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM
著者 (5件):
Fukuyama Shouhei
(Department of Electrical, Electronic, and Communication Engineering, Chuo University, Tokyo, Japan)
,
Maeda Kazuki
(Department of Electrical, Electronic, and Communication Engineering, Chuo University, Tokyo, Japan)
,
Matsuda Shinpei
(Department of Electrical, Electronic, and Communication Engineering, Chuo University, Tokyo, Japan)
,
Takeuchi Ken
(Department of Electrical, Electronic, and Communication Engineering, Chuo University, Tokyo, Japan)
,
Yasuhara Ryutaro
(Panasonic Semiconductor Solutions Co., Ltd., 1 Kotari-yakemachi, Nagaokakyo, Kyoto, 617-8520, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
IRPS
ページ:
P-MY.4-1-P-MY.4-5
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)