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J-GLOBAL ID:201802281182879423
整理番号:18A0151043
歪補償Si_1 xC_xスペーサを有する積層Ge量子ドットの形成と歪解析【Powered by NICT】
Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain-Compensating Si1-xCx Spacer
著者 (5件):
Itoh Yuhki
(Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
,
Itoh Yuhki
(Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramai, Aoba-ku, Sendai, Miyagi 980-8578, Japan)
,
Itoh Yuhki
(Japan Society for the Promotion of Science (JSPS) Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan)
,
Kawashima Tomoyuki
(Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
,
Washio Katsuyoshi
(Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan)
資料名:
Physica Status Solidi. C. Current Topics in Solid State Physics
(Physica Status Solidi. C. Current Topics in Solid State Physics)
巻:
14
号:
12
ページ:
ROMBUNNO.201700197
発行年:
2017年
JST資料番号:
W1400A
ISSN:
1862-6351
CODEN:
PSSCGL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)