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J-GLOBAL ID:201802281587709500
整理番号:18A0160123
絹蛋白質上のZnOをベースにした物理的に過渡的および生体吸収性メモリ【Powered by NICT】
ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein
著者 (8件):
Song Fang
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Wang Hong
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Sun Jing
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Gao Haixia
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
,
Wu Shiwei
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Yang Mei
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Ma Xiaohua
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China)
,
Hao Yue
(Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
1
ページ:
31-34
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)