文献
J-GLOBAL ID:201802282349549016
整理番号:18A1028597
熱アニーリング中のp+-ポリSiからc-Siへのドーパント拡散【JST・京大機械翻訳】
Dopant diffusion from p+-poly-Si into c-Si during thermal annealing
著者 (9件):
Krugener Jan
(Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, D-30167 Hannover, Germany)
,
Larionova Yevgeniya
(Institute for Solar Energy Research Hamelin, D-31860 Emmerthal, Germany)
,
Tetzlaff Dominic
(Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, D-30167 Hannover, Germany)
,
Wolpensinger Bettina
(Institute for Solar Energy Research Hamelin, D-31860 Emmerthal, Germany)
,
Reiter Sina
(Institute for Solar Energy Research Hamelin, D-31860 Emmerthal, Germany)
,
Turcu Mircea
(Institute for Solar Energy Research Hamelin, D-31860 Emmerthal, Germany)
,
Peibst Robby
(Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, D-30167 Hannover, Germany)
,
Kahler Jan-Dirk
(Centrotherm photovoltaics AG, D-30179 Hannover, Germany)
,
Wietler Tobias
(Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, D-30167 Hannover, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
PVSC
ページ:
1-4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)