文献
J-GLOBAL ID:201802283167251912
整理番号:18A0942133
SiGe HBTにおけるホットキャリア損傷誘起電流利得増強(CGE)効果【JST・京大機械翻訳】
Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs
著者 (9件):
Raghunathan Uppili S.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Martinez Rafael Perez
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Wier Brian R.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Omprakash Anup P.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Ying Hanbin
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Bantu Tikurete G.
(Texas Instruments Incorporated, Dallas, TX, USA)
,
Yasuda Hiroshi
(Texas Instruments Incorporated, Dallas, TX, USA)
,
Menz Philipp
(Texas Instruments Deutschland Gmbh, Freising, Germany)
,
Cressler John D.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
6
ページ:
2430-2438
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)