文献
J-GLOBAL ID:201802283221279512
整理番号:18A0924474
α-(Al_xGa_1-x)_2O_3バッファ層の導入によるサファイア基板上のGa_2O_3の結晶構造の制御【JST・京大機械翻訳】
Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of α-(AlxGa1-x)2O3 Buffer Layer
著者 (6件):
Jinno Riena
(Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan)
,
Uchida Takayuki
(Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan)
,
Kaneko Kentaro
(Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan)
,
Kaneko Kentaro
(Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan)
,
Fujita Shizuo
(Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan)
,
Fujita Shizuo
(Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
255
号:
4
ページ:
e1700326
発行年:
2018年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)