文献
J-GLOBAL ID:201802283264769484
整理番号:18A1378059
19-1:招待論文:スパッタ非晶質タングステンドープ酸化インジウムベース薄膜トランジスタの安定性【JST・京大機械翻訳】
19-1: Invited Paper: Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors
著者 (6件):
Zhang Qun
(Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai, 200433, China)
,
Yang Zhao
(Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai, 200433, China)
,
Qu Mingyue
(Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai, 200433, China)
,
Fu Ruofan
(Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai, 200433, China)
,
Liu Po-Tsun
(Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu, 30010, Taiwan)
,
Shieh Han-Ping D.
(Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu, 30010, Taiwan)
資料名:
Digest of Technical Papers. SID International Symposium (Society for Information Display)
(Digest of Technical Papers. SID International Symposium (Society for Information Display))
巻:
49
号:
1
ページ:
225-227
発行年:
2018年
JST資料番号:
E0907A
ISSN:
0097-966X
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)