文献
J-GLOBAL ID:201802284369840394
整理番号:18A0161229
LPDDR4SDRAMにおける専用電源電圧のための二重ループ2ステップZQキャリブレーション【Powered by NICT】
Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM
著者 (35件):
Lee Chang-Kyo
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Lee Junha
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kim Ki-Ho
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Heo Jin-Seok
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Cha Gil-Hoon
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Baek Jin-Hyeok
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Moon Dae-Sik
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Eom Yoon-Joo
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kim Tae-Sung
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Cho Hyunyoon
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Son Younghoon
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kim Seonghwan
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Park Jong-Wook
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Eom Sewon
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Cho Si-Hyeong
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Choi Young-Ryeol
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Lee Seungseob
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Ha Kyoung-Soo
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kim Youngseok
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Lim Bo-Tak
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Jung Dae-Hee
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Seo Eungsung
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kim Kyoung-Ho
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Song Yoon-Gyu
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Park Youn-Sik
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Oh Tae-Young
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Bae Seung-Jun
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Song In-Dal
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Hyun Seok-Hun
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Park Joon-Young
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Kwon Hyuck-Joon
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Sohn Young-Soo
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Choi Jung-Hwan
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Park Kwang-Il
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
,
Jang Seong-Jin
(Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
A-SSCC
ページ:
153-156
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)