文献
J-GLOBAL ID:201802284632320189
整理番号:18A0132651
Gd_3(Ga,Al)_5O_12:Ce単結晶におけるルミネセンスと欠陥形成過程に及ぼすGa含有量の影響【Powered by NICT】
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
著者 (6件):
Grigorjeva L.
(Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063, Latvia)
,
Kamada K.
(New Industry Creation Hatchery Center, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan)
,
Nikl M.
(Institute of Physics AS CR, Cukrovarnicka 10, 16253, Prague 6, Czech Republic)
,
Yoshikawa A.
(Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan)
,
Zazubovich S.
(Institute of Physics, University of Tartu, W. Oswaldi 1, 50411, Tartu, Estonia)
,
Zolotarjovs A.
(Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063, Latvia)
資料名:
Optical Materials
(Optical Materials)
巻:
75
ページ:
331-336
発行年:
2018年
JST資料番号:
W0468A
ISSN:
0925-3467
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)