文献
J-GLOBAL ID:201802285915134862
整理番号:18A0073658
BiCMOS SiGeの信頼性解析:新たなRFとミリ波応用のための積極的な条件下でのC技術【Powered by NICT】
Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-Wave applications
著者 (15件):
Lahbib Insaf
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Wane Sidina
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Lesenechal Dominique
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Doukkali Aziz
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Dinh Thanh Vinh
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Leyssenne Laurent
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Germanicus Rosine Coq
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Bezerra Franqoise
(CNES, Toulouse-France)
,
Rolland Guy
(CNES, Toulouse-France)
,
Andrei Cristian
(NXP-Semiconductors-France)
,
Imbert Guy
(NXP-Semiconductors-France)
,
Martin Patrick
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Descamps Philippe
(LaMIPS-CRISMAT-Presto-Engineering, Caen-France)
,
Boguszewski Guillaume
(CYleone, Business Innovation Center, Montpellier-France)
,
Bajon Damienne
(ISAE-SUPAERO, Universite de Toulouse-France)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
EuMIC
ページ:
147-150
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)