文献
J-GLOBAL ID:201802286109237562
整理番号:18A1768116
金属ドープITO層を有する高効率緑色InGaN発光ダイオードの作製と特性評価【JST・京大機械翻訳】
Fabrication and Characterization of High-Efficiency Green InGaN Light-Emitting Diodes With Metal-Doped ITO Layer
著者 (5件):
Wen Rulian
(Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, China)
,
Hu Xiaolong
(Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, China)
,
Zhou Quanbin
(Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou, China)
,
Chen Ditao
(Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou, China)
,
Wang Hong
(Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
10
ページ:
4334-4339
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)