文献
J-GLOBAL ID:201802286212408306
整理番号:18A0438771
標準CMOS技術における1060nmでの高感度Siフォトダイオード【Powered by NICT】
High-Responsivity Si Photodiodes at 1060 nm in Standard CMOS Technology
著者 (8件):
Guo Xia
(School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing, China)
,
Liu Qiaoli
(School of Information, Beijing University of Technology, Beijing, China)
,
Zhou Hongyi
(School of Information, Beijing University of Technology, Beijing, China)
,
Luan Xinxin
(School of Information, Beijing University of Technology, Beijing, China)
,
Li Chong
(School of Information, Beijing University of Technology, Beijing, China)
,
Hu Zonghai
(School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing, China)
,
Hu Anqi
(School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing, China)
,
He Xiaoying
(School of Information, Beijing University of Technology, Beijing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
2
ページ:
228-231
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)