文献
J-GLOBAL ID:201802286933016651
整理番号:18A1301165
抑制内部オーバシュート電流によるSiN_xベース抵抗スイッチングメモリの均一性改善【JST・京大機械翻訳】
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current
著者 (7件):
Kim Min-Hwi
(Inter-University Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea)
,
Kim Sungjun
(School of Electronics Engineering, Chungbuk National University, Cheongju, South Korea)
,
Bang Suhyun
(Inter-University Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea)
,
Kim Tae-Hyeon
(Inter-University Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea)
,
Lee Dong Keun
(Inter-University Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea)
,
Cho Seongjae
(Department of Electronic Engineering, Gachon University, Seongnam-si, South Korea)
,
Park Byung-Gook
(Inter-University Semiconductor Research Center and the Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea)
資料名:
IEEE Transactions on Nanotechnology
(IEEE Transactions on Nanotechnology)
巻:
17
号:
4
ページ:
824-828
発行年:
2018年
JST資料番号:
W1355A
ISSN:
1536-125X
CODEN:
ITNECU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)