文献
J-GLOBAL ID:201802287586618275
整理番号:18A0536745
二重トレンチ4H SiC UMOSFETの増強されたモデルとしてのSiC MOSFET【Powered by NICT】
A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET
著者 (4件):
Oraon Alisha
(Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India)
,
Shreya Shradha
(Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India)
,
Kumari Renuka
(Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India)
,
Islam Aminul
(Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISED
ページ:
1-5
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)