文献
J-GLOBAL ID:201802289554079120
整理番号:18A0610153
誘電体としての化学蒸着した六方晶窒化ホウ素を用いた電子デバイスにおけるバイモーダル誘電体ブレークダウン【Powered by NICT】
Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric
著者 (7件):
Palumbo Felix
(National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA, Nanoelectronics Laboratory National Technological University (UTN-FRBA), Medrano, 951, Buenos Aires, Argentina)
,
Liang Xianhu
(Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou, 215123, China)
,
Yuan Bin
(Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou, 215123, China)
,
Shi Yuanyuan
(Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA)
,
Hui Fei
(Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK)
,
Villena Marco A.
(Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou, 215123, China)
,
Lanza Mario
(Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou, 215123, China)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
4
号:
3
ページ:
ROMBUNNO.201700506
発行年:
2018年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)