文献
J-GLOBAL ID:201802289867329320
整理番号:18A1489863
HFトップ電極によるHfO_2ベース抵抗メモリにおける増強磁気変調【JST・京大機械翻訳】
Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode
著者 (5件):
Guo Jiajun
(College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China)
,
Kang Xin
(College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China)
,
Gao Yingjie
(College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China)
,
Chen Wei
(College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China)
,
Zhao Xu
(College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
4
ページ:
043502-043502-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)