文献
J-GLOBAL ID:201802291329401943
整理番号:18A1248750
静電容量測定によるpチャネルpH感受性SINW ISFETにおける電流ドリフトの解析【JST・京大機械翻訳】
Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement
著者 (8件):
Kim Sihyun
(Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea)
,
Kwon Dae Woong
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, USA)
,
Kim Sangwan
(Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea)
,
Lee Ryoongbin
(Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea)
,
Kim Tae-Hyeon
(Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea)
,
Mo Hyun-Sun
(School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea)
,
Kim Dae Hwan
(School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea)
,
Park Byung-Gook
(Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
18
号:
S
ページ:
S68-S74
発行年:
2018年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)