文献
J-GLOBAL ID:201802291492128413
整理番号:18A0973545
光電神経形態デバイスのための光刺激IGZOベース電気二重層トランジスタ【JST・京大機械翻訳】
Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices
著者 (5件):
Yang Yi
(School of Electronic Science and Engineering and the Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
He Yongli
(School of Electronic Science and Engineering and the Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Nie Sha
(School of Electronic Science and Engineering and the Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Shi Yi
(School of Electronic Science and Engineering and the Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Wan Qing
(School of Electronic Science and Engineering and the Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
6
ページ:
897-900
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)