文献
J-GLOBAL ID:201902210371268371
整理番号:19A1414422
120Kまでの温度でのInAs/GaAs量子ドットの歪結合二重層からの1.3μm単一光子放出【JST・京大機械翻訳】
1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
著者 (7件):
Xue Yongzhou
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Chen Zesheng
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Ni Haiqiao
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Niu Zhichuan
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Jiang Desheng
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Dou Xiuming
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Sun Baoquan
(State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
18
ページ:
182102-182102-4
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)