文献
J-GLOBAL ID:201902211456817928
整理番号:19A2824218
CsSnI_3薄膜の熱電性能を高めるためのY_2O_3足場を用いた界面工学【JST・京大機械翻訳】
Interface engineering using Y2O3 scaffold to enhance the thermoelectric performance of CsSnI3 thin film
著者 (8件):
Baranwal Ajay Kumar
(i-Powered Energy System Research Centre, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan)
,
Saini Shrikant
(Department of Mechanical & Control Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata, Kitakyushu, 804-8550, Japan)
,
Wang Zhen
(Graduate School of Life Science & Systems Engineering, Kyushu institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, 808-0196, Japan)
,
Hirotani Daisuke
(Graduate School of Life Science & Systems Engineering, Kyushu institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, 808-0196, Japan)
,
Yabuki Tomohide
(Department of Mechanical & Control Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata, Kitakyushu, 804-8550, Japan)
,
Iikubo Satoshi
(Graduate School of Life Science & Systems Engineering, Kyushu institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, 808-0196, Japan)
,
Miyazaki Koji
(Department of Mechanical & Control Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata, Kitakyushu, 804-8550, Japan)
,
Hayase Shuzi
(i-Powered Energy System Research Centre, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan)
資料名:
Organic Electronics
(Organic Electronics)
巻:
76
ページ:
Null
発行年:
2020年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)