文献
J-GLOBAL ID:201902214383677411
整理番号:19A2110975
4H-SiCにおける窒素空孔中心の形成とそれらの近赤外光ルミネセンス特性【JST・京大機械翻訳】
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
著者 (6件):
Sato Shin-ichiro
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan)
,
Narahara Takuma
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan)
,
Abe Yuta
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan)
,
Hijikata Yasuto
(Graduate School of Science and Engineering, Saitama University, 255 Shimo-ohkubo, Sakura-ku, Saitama, Saitama 338-8570, Japan)
,
Umeda Takahide
(Tsukuba Research Center for Energy Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan)
,
Ohshima Takeshi
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
126
号:
8
ページ:
083105-083105-10
発行年:
2019年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)