文献
J-GLOBAL ID:201902214730423205
整理番号:19A1410252
高性能多層MOS_2電界効果トランジスタの安定性の改善【JST・京大機械翻訳】
Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors
著者 (9件):
Liu Na
(School of Advanced Materials Science & Engineering, Sungkyunkwan University, Republic of Korea)
,
Baek Jongyeol
(School of Advanced Materials Science & Engineering, Sungkyunkwan University, Republic of Korea)
,
Kim Seung Min
(Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Republic of Korea)
,
Hong Seongin
(School of Advanced Materials Science & Engineering, Sungkyunkwan University, Republic of Korea)
,
Hong Young Ki
(School of Advanced Materials Science & Engineering, Sungkyunkwan University, Republic of Korea)
,
Kim Yang Soo
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
,
Kim Hyun-Suk
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
,
Kim Sunkook
(School of Advanced Materials Science & Engineering, Sungkyunkwan University, Republic of Korea)
,
Park Jozeph
(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
9
号:
49
ページ:
42943-42950
発行年:
2017年12月13日
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)