文献
J-GLOBAL ID:201902214780652445
整理番号:19A1415276
Li-P二重アクセプタドープp型ZnOの形成機構の研究【JST・京大機械翻訳】
Investigation of formation mechanism of Li-P dual-acceptor doped p-type ZnO
著者 (5件):
Sharma Pankaj
(Hybrid Nanodevice Research Group, Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India)
,
Bhardwaj Ritesh
(Hybrid Nanodevice Research Group, Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India)
,
Singh Rohit
(Hybrid Nanodevice Research Group, Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India)
,
Kumar Shailendra
(Raja Ramanna Center for Advanced Technology, Indore 452013, India)
,
Mukherjee Shaibal
(Hybrid Nanodevice Research Group, Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
9
ページ:
091604-091604-4
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)