文献
J-GLOBAL ID:201902215309280479
整理番号:19A2106806
ナノスケール分域を持つNaNbO_3ベースの無鉛リラクサ反強誘電セラミックにおける超高エネルギー貯蔵密度【JST・京大機械翻訳】
Ultrahigh Energy-Storage Density in NaNbO3-Based Lead-Free Relaxor Antiferroelectric Ceramics with Nanoscale Domains
著者 (7件):
Qi He
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Zuo Ruzhong
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Xie Aiwen
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Tian Ao
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Fu Jian
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Zhang Yi
(Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, P. R. China)
,
Zhang Shujun
(Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, NSW, 2500, Australia)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
29
号:
35
ページ:
e1903877
発行年:
2019年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)