文献
J-GLOBAL ID:201902216601211908
整理番号:19A1414853
GaMnAs強磁性半導体における電流誘起スピン-軌道有効磁場の決定【JST・京大機械翻訳】
Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor
著者 (11件):
Lee Sangyeop
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Choi Seonghoon
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Bac Seul-Ki
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Jae Lee Kyung
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Chang Jihoon
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Choi Suho
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Chongthanaphisut Phunvira
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Lee Sanghoon
(Physics Department, Korea University, Seoul 136-701, South Korea)
,
Liu Xinyu
(Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA)
,
Dobrowolska M.
(Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA)
,
Furdyna Jacek K.
(Physics Department, University of Notre Dame, Notre Dame, Indiana 46556, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
25
ページ:
252401-252401-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)