文献
J-GLOBAL ID:201902216615356129
整理番号:19A1415819
イットリウムドープZnOナノ粒子による電子注入変調による量子ドット発光ダイオードの性能改善【JST・京大機械翻訳】
Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles
著者 (8件):
Li Jingling
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Guo Qiling
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Jin Hu
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Wang Kelai
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Xu Dehua
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Xu Yongjun
(Dongguan University of Technology, Dongguan 523808, China)
,
Xu Gang
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
,
Xu Xueqing
(CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
13
ページ:
135501-135501-9
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)