文献
J-GLOBAL ID:201902217151114768
整理番号:19A0491300
150mm Si(111)基板上のGaNの応力制御におけるAlN挿入層の役割について【JST・京大機械翻訳】
On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate
著者 (8件):
Lin Po-Jung
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan)
,
Lin Po-Jung
(Hermes-Epitek Corporation, Hisinchu 30077, Taiwan)
,
Tien Ching-Ho
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan)
,
Wang Tzu-Yu
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan)
,
Chen Che-Lin
(Hermes-Epitek Corporation, Hisinchu 30077, Taiwan)
,
Ou Sin-Liang
(Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan)
,
Chung Bu-Chin
(Hermes-Epitek Corporation, Hisinchu 30077, Taiwan)
,
Wuu Dong-Sing
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan)
資料名:
Crystals (Web)
(Crystals (Web))
巻:
7
号:
5
ページ:
134
発行年:
2017年
JST資料番号:
U7169A
ISSN:
2073-4352
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)