文献
J-GLOBAL ID:201902217663342954
整理番号:19A2501667
自立GaN基板上のAlGaN/GaN高電子移動度トランジスタにおけるバックバリア効果の解析【JST・京大機械翻訳】
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
著者 (12件):
Liu Xinke
(State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People’s Republic of China)
,
Wang Hao-Yu
(Department of Electronics Engineering, Chang Gung University, Taoyuan, 333, Taiwan)
,
Chiu Hsien-Chin
(Department of Electronics Engineering, Chang Gung University, Taoyuan, 333, Taiwan)
,
Chiu Hsien-Chin
(Departments of Radiation Oncology, Chang Gung Memorial Hospital, Taoyuan, 333, Taiwan)
,
Chiu Hsien-Chin
(The College of Engineering, Ming Chi University of Technology, Taishan, 243, Taiwan)
,
Chen Yuxuan
(State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People’s Republic of China)
,
Li Dabing
(State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People’s Republic of China)
,
Huang Chong-Rong
(Department of Electronics Engineering, Chang Gung University, Taoyuan, 333, Taiwan)
,
Kao Hsuan-Ling
(Department of Electronics Engineering, Chang Gung University, Taoyuan, 333, Taiwan)
,
Kao Hsuan-Ling
(The College of Engineering, Ming Chi University of Technology, Taishan, 243, Taiwan)
,
Kuo Hao-Chung
(Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan)
,
Huang Chen Sung-Wen
(Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
814
ページ:
Null
発行年:
2020年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)