文献
J-GLOBAL ID:201902219878679675
整理番号:19A1627293
正孔輸送層の修飾を用いたCH_3NH_3PbI_3ペロブスカイト太陽電池における界面欠陥不動態化【JST・京大機械翻訳】
Interfacial defect passivation in CH3NH3PbI3 perovskite solar cells using modifying of hole transport layer
著者 (5件):
Alidaei Maryam
(Faculty of Physics, Shahrood University of Technology, Shahrood, Iran)
,
Izadifard Morteza
(Faculty of Physics, Shahrood University of Technology, Shahrood, Iran)
,
Ghazi Mohammad Ebrahim
(Faculty of Physics, Shahrood University of Technology, Shahrood, Iran)
,
Roghabadi Farzaneh Arabpour
(Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran)
,
Ahmadi Vahid
(Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
30
号:
7
ページ:
6936-6946
発行年:
2019年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)