文献
J-GLOBAL ID:201902220381071508
整理番号:19A1413699
ダイヤモンド上のSiO_2層を遮蔽することによるN+イオン注入により生成した窒素空孔中心【JST・京大機械翻訳】
Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond
著者 (7件):
Ito Kazuki
(School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan)
,
Saito Hiroshi
(School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan)
,
Sasaki Kento
(School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan)
,
Watanabe Hideyuki
(Correlated Electronics Group, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan)
,
Teraji Tokuyuki
(National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
,
Itoh Kohei M.
(School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan)
,
Abe Eisuke
(Spintronics Research Center, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
21
ページ:
213105-213105-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)