文献
J-GLOBAL ID:201902220493796970
整理番号:19A1414728
SnO_2終端を有する原子的に平坦なBaSnO_3(001)基板の実現【JST・京大機械翻訳】
Realization of an atomically flat BaSnO3(001) substrate with SnO2 termination
著者 (8件):
Lee Woong-Jhae
(Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea)
,
Lee Hwangho
(Max Planck POSTECH Center for Complex Phase Materials and Department of Physics, Pohang University of Science and Technology, Pohang 37673, South Korea)
,
Ko Kyung-Tae
(Max Planck POSTECH Center for Complex Phase Materials and Department of Physics, Pohang University of Science and Technology, Pohang 37673, South Korea)
,
Kang Jeonghun
(Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea)
,
Kim Hyung Joon
(Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea)
,
Lee Takhee
(Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea)
,
Park Jae-Hoon
(Max Planck POSTECH Center for Complex Phase Materials and Department of Physics, Pohang University of Science and Technology, Pohang 37673, South Korea)
,
Kim Kee Hoon
(Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
23
ページ:
231604-231604-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)